In2te3 ferroelectric
WebSep 9, 2024 · In addition, an abnormal resistive switching phenomenon in α-In 2 Se 3 is reported when operated in the in-plane ferroelectric switching mode. The findings pave … WebJun 16, 2024 · Here we report the experimental demonstration of 2D ferroelasticity in vdW β’ -In 2 Se 3 down to few-layer thickness. As a III 2 -VI 3 compound semiconductor, In 2 Se 3 …
In2te3 ferroelectric
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The In2Se3 films were transferred from mica to TEM grids or other substrates by the poly (methyl methacrylate) (PMMA) method. The PMMA solution was first spin coated onto mica at 3,000 rpm for 60 s and then heated at 100 °C for 5 min. Second, the PMMA was spin coated again to the mica at 1,000 rpm for 60 … See more In a typical CVD process, 6 mg In2O3 (99.99%, Alfa) and three fresh mica sheets were loaded into the quartz boat and placed in downstream zone 2 (T2 = 560–760 °C; heating … See more The InSe crystals were synthesized by heating In2Se3 powder (99.99%, Innochem) at 950 °C for 30 min under H2/N2 mixed gas (30 s.c.c.m.). Then, the InSe powder was obtained by grinding the InSe crystals. In the … See more The In2Se3 films were characterized by OM (Leica, DM2700M and DM1750M), atomic force microscopy (Hitachi 5300E), piezoresponse force microscopy (Asylum Research MFP-3D … See more The metastable β′-In2Se3 can be transformed into a more stable α phase by releasing the strain. We release the strain of β′-In2Se3 films by … See more WebOct 6, 2024 · Generally, the strain resulting from the lattice mismatch may affect the electronic structures of the graphene/In 2 Te 3 heterostructures. For comparison, the …
WebJan 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be... WebOct 12, 2016 · A series of In 2 Te 3 thin films with various thicknesses was prepared on fused quartz substrate using a radio-frequency magnetron sputtering method. After …
WebDec 21, 2015 · The Bi2Te3/In2Te3 interface is determined as coherent, and the crystallographic orientation between the two phases is determined as «2¯11»In2Te3//«11¯00»Bi2Te3, {111}In2Te3// {0001}Bi2Te3. No... WebDec 8, 2024 · 2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into ...
WebJan 1, 2005 · It was claimed that the resistivity of III–VI semiconductors (Ga 2 Te 3 and In 2 Te 3) decreases abruptly under hydrostatic pressures between 1 and 7 GPa. The …
WebApr 7, 2024 · The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In 2 Se 3 /graphene, exhibiting a tunable Schottky barrier ... how many legislators in mississippiWebBy alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.", author = "Gangjian Tan and Zeier, {Wolfgang G.} and Fengyuan Shi and Pengli Wang and Snyder, {G. Jeffery} and Dravid, {Vinayak P.} and Kanatzidis ... how are account functions organisedhow are access and excel differentWebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3. how are acai bowls madeWebAbstract. van der Waals layered α-In 2 Se 3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an … how are accents formedWebNov 9, 2024 · The anti-ferroelectric order in β′-In 2 Se 3 and ferroelectric order of β*-In 2 Se 3 are identified, respectively, down to the 2D limit by comprehensive investigations of structural and spectroscopic signatures, including the lattice distortion, the spatial profile of images, the formation of domain structure, and the electronic band ... how many legislators does texas haveWebFeb 1, 2024 · When stacking a Bi 2 Se 3 layer on top of a α -In 2 Se 3 ferroelectric layer, two different arrangements can be obtained, noted hereafter G1 and G 2, depending on the direction of the polarization vector: in the G 1 configuration, the spontaneous out-of-plane electric polarization P is pointing towards Bi 2 Se 3 while in the configuration G 2 it … how are accountants involved with the sdlc